Sputtering System

▪ Process Chamber Method : Dep-down(planar type)
▪ Base pressure : 1 x 10-7
▪ Cathode 3 inch internal type : 3 sets
▪ Substrate holder : Max. size is 2 inch 3ea(Rotation:30rpm)
▪ Thickness uniformity : Guarateed in 3: dia
▪ Substrate heater : Max. Temp 850c(resistive heater)
▪ Pumping system APC function : conductance adjustment valve
▪ RF bias and sputter ehch for pre-cleaning are option
▪ Operation system : Semi auto control interface(PLC/PC base control)