CCP-RIE System

▪ Composition of one process Chamber
▪ Substrate Cooling at He Gas
▪ Substrate & Pin up-down kit
▪ CCP Source ~1kw at 60MHz
▪ Bias Power : ~ 600w at 2MHz
▪ Effcient power Coupling with Phase Shifter
▪ Bias voltage Monitoring
▪ Operation Pressure : 1mTorr~100mtorr
▪ Gas control : MFC(CF4, Cl2,Ar,O2,N2,He)
▪ High Vacuum Turbo Pump_ 700L/sec
▪ APC Valve
▪ Etching Mareials : Sapphire Substarte Wafer,Gan…
▪ 6" Chucking Cathode
▪ Loadlock chamber with auto transfer unit
▪ System control & operation module
▪ Auto process control
▪ Electrical power drive panel box
▪ PM Dry pump : 1set(>10,000 l/min)
▪ L/L rotary pump : 1set(> 600 l/min)
▪ sol valve,manipolder,Air pressiure
▪ Water Distributor,water flow sensor